Search results for "Failure rate"

showing 8 items of 8 documents

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

2012

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Nuclear and High Energy PhysicsSpace technologyMaterials scienceta114Dielectric strengthbusiness.industryElectrical engineeringFailure rateHardware_PERFORMANCEANDRELIABILITYlaw.inventionCapacitorNuclear Energy and EngineeringlawGate oxideMOSFETHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessRadiation hardeningHardware_LOGICDESIGNIEEE Transactions on Nuclear Science
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Explaining Individual and Collective Programming Students’ Behavior by Interpreting a Black-Box Predictive Model

2021

Predicting student performance as early as possible and analysing to which extent initial student behaviour could lead to failure or success is critical in introductory programming (CS1) courses, for allowing prompt intervention in a move towards alleviating their high failure rate. However, in CS1 performance prediction, there is a serious lack of studies that interpret the predictive model’s decisions. In this sense, we designed a long-term study using very fine-grained log-data of 2056 students, collected from the first two weeks of CS1 courses. We extract features that measure how students deal with deadlines, how they fix errors, how much time they spend programming, and so forth. Subs…

COMPUTADOR NO ENSINOGeneral Computer ScienceComputer scienceProcess (engineering)business.industryGeneral EngineeringFailure rateMachine learningcomputer.software_genreField (computer science)Identification (information)Black boxLeverage (statistics)General Materials ScienceArtificial intelligencePrescriptive analyticsConstruct (philosophy)businesscomputerIEEE Access
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Failure Rate Measurement on Silicon Diodes Reverse Polarized at High Temperature

2017

This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify, experimentally, the rules of the European Space Agency (ESA) which are referred to the component life’s extension, the reliability increase and the end of life performance enhancement, by using oversized devices (derating rules). In order to verify the derating rules, 80 silicon diodes are used, which are reverse polarized in a high temperature environment. The diodes are divided in 4 groups of 20 diodes, applying a different voltage to each group, in order to relate the failure rate to the applied derating rule. The experiment described in this paper is developed using a temperature acceler…

lcsh:GE1-350EngineeringSiliconbusiness.industryNuclear engineering0211 other engineering and technologieschemistry.chemical_elementFailure rate02 engineering and technology010501 environmental sciencesPolarization (waves)01 natural sciencesWhole systemschemistryReverse biasDeratingElectronic engineering021108 energybusinesslcsh:Environmental sciences0105 earth and related environmental sciencesVoltageDiodeE3S Web of Conferences
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Economic Robustness Analysis of Adaptive Chart Schemes for Monitoring the Total Nonconformities Number in Inspection Units

2015

In recent years, a variety of enhanced schemes for the c chart have been developed aimed at the effectiveness improving of the related statistical process control (SPC) procedures. However, the performance of such chart schemes can be very sensitive to values assumed for some operating and cost parameters, in particular to the considered process shift magnitude arising from out-of-control conditions. In such a circumstance, the effectiveness of such chart schemes can be subjected to substantial reductions when they are implemented in operative contexts given that, in practice, such value is unknown and it can be very difficult to accurately estimate. For this reason, in the present paper i…

c-chartEconomic optimizationEngineeringGeneral Computer Sciencebusiness.industrylabor resource costtaguchi’s loss functionnon-linear mathematical programming modelEnergy Engineering and Power TechnologyAerospace EngineeringFractional factorial designFailure rateStatistical process controlIndustrial and Manufacturing EngineeringReliability engineeringAdaptive chart for attributeNuclear Energy and EngineeringChartRobustness (computer science)Performance comparisonElectrical and Electronic Engineeringeconomic robustness analysiSafety Risk Reliability and QualitybusinessSettore ING-IND/16 - Tecnologie E Sistemi Di LavorazioneInternational Journal of Reliability, Quality and Safety Engineering
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Failure Estimates for SiC Power MOSFETs in Space Electronics

2018

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed

Materials sciencesingle-event burnoutlcsh:Motor vehicles. Aeronautics. AstronauticsAerospace EngineeringBurnoutpower MOSFETs01 natural scienceschemistry.chemical_compoundReliability (semiconductor)silicon carbide0103 physical sciencesSilicon carbidePower semiconductor devicePower MOSFETheavy ionsavaruustekniikka010302 applied physicspower devicesreliabilityta114ta213010308 nuclear & particles physicsfailure ratessingle event effectsEngineering physicsPower (physics)säteilyfysiikkachemistrytransistoritField-effect transistorlcsh:TL1-4050VoltageAerospace
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Properties of the elasticity of a continuous random variable. A special look at its behavior and speed of change

2016

ABSTRACTBelzunce et al. (1995) define the elasticity for non negative random variables as the reversed proportional failure rate (RPFR). Veres-Ferrer and Pavia (2012, 2014b) interpret it in economic terms, extending its definition to variables that can also take negative values, and briefly present the role of elasticity in characterizing probability distributions. This paper highlights a set of properties demonstrated by elasticity, which shows many similar properties to the reverse hazard function. This paper pays particular attention to studying the increase/decrease and the speed of change of the elasticity function. These are important properties because of the characterizing role of e…

Statistics and Probability021103 operations researchStochastic process0211 other engineering and technologiesFailure rate02 engineering and technology01 natural sciencesElasticity of a function010104 statistics & probabilitysymbols.namesakeEconometricssymbolsProbability distribution0101 mathematicsElasticity (economics)Fisher informationRandom variableMathematicsCommunications in Statistics - Theory and Methods
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Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions

2019

The estimation of the reliability of magnetic field sensors against failure is a critical point concerning their application for industrial purposes. Due to the physical stochastic nature of the failure events, this can only be done by means of a statistical approach which is extremely time consuming and prevents a continuous observation of the production. Here, we present a novel microstructure design for a parallel measurement of the lifetime characteristics of a sensor population. By making use of two alternative designs and the Weibull statistical distribution function, we are able to measure the lifetime characteristics of a CoFeB/MgO/CoFeB tunneling junction population. The main param…

Materials science530 PhysicsPopulationMgO02 engineering and technologylcsh:Chemical technology01 natural sciencesBiochemistryArticleAnalytical Chemistrytunneling barrierstressCritical point (thermodynamics)sensor0103 physical sciencesElectronic engineeringlcsh:TP1-1185Electrical and Electronic EngineeringeducationInstrumentationWeibull distribution010302 applied physicseducation.field_of_studyreliabilityTime evolutionFailure rate021001 nanoscience & nanotechnologyMicrostructure530 PhysikAtomic and Molecular Physics and OpticsMagnetic fieldfailureDistribution functionTMRWeibull0210 nano-technologyMTJSensors (Basel, Switzerland)
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Failure Rate, Marginal Bone Loss, and Pink Esthetic with Socket-Shield Technique for Immediate Dental Implant Placement in the Esthetic Zone. A Syste…

2021

Simple Summary The socket-shield technique has been proposed for preserving the bone ridge and surrounding soft tissues with immediate implantation in the extraction socket, maintaining the buccal wall fragment of the dental root. However, the socket-shield technique has not been compared with the conventional technique for immediate dental implant placement in the esthetic zone regarding the failure rate, marginal bone loss, and pink esthetic. Therefore, it is necessary to develop a systematic review and meta-analysis that provides evidence associated with the prognosis when using the socket-shield technique compared to the conventional technique. Abstract Aim: To compare the failure rate,…

marginal bone lossQH301-705.5medicine.medical_treatmentDentistryReviewBiologyGeneral Biochemistry Genetics and Molecular Biologylaw.invention03 medical and health sciences0302 clinical medicineRandomized controlled triallawmedicineBiology (General)Dental implantimmediate implantGeneral Immunology and Microbiologybusiness.industryImplant failureFailure rateRetrospective cohort study030206 dentistryImmediate implantsocket shieldSystematic reviewimplant failureMeta-analysisGeneral Agricultural and Biological Sciencesbusinesspink esthetic030215 immunologyBiology
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